Crystallization of silicon thin films by current-induced joule heating using a tungsten overcoat by Gwo-Mei Wu and Chen-Yen Wu

Crystal Research and Technology

Cryst. Res. Technol. 42, 1271 (2007) - Abstract -

Crystallization of silicon thin films by current-induced joule heating using a tungsten overcoat

Gwo-Mei Wu and Chen-Yen Wu

Advanced Materials Laboratory, Institute of Electro-Optical Engineering, Chang Gung University, Taoyuan 333, Taiwan

Keywords	silicon thin film, polycrystalline, Joule heating, tungsten
PACS	68.55.Jk, 71.23.Cq, 75.20.En
DOI	10.1002/crat.200711017

A modified crystallization process using current-induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α-stepper. The high current density provided effective means in crystallizing the amorphous silicon layer. The crystalline morphology was studied by scanning electron microscopy (SEM) after Secco-etch, transmission electron microscopy (TEM), and x-ray diffraction (XRD), under different annealing conditions. The grain size was controlled in the range of 0.1-0.5 μm and could be increased with annealing time. No tungsten silicide was found. Some defects were formed due to electron-migration effect near the electrodes.

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