Investigation of GaN crystal quality on silicon substrates using GaN/AlN superlattice structures by Gwo-Mei Wu, Chen-Wen Tsai, Nie-Chuan Chen, and Pen-Hsiu Chang

Crystal Research and Technology

Cryst. Res. Technol. 42, 1276 (2007) - Abstract -

Investigation of GaN crystal quality on silicon substrates using GaN/AlN superlattice structures

Gwo-Mei Wu, Chen-Wen Tsai, Nie-Chuan Chen, and Pen-Hsiu Chang

Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

Keywords	gallium nitride, superlattice, silicon substrate
PACS	68.65.Cd, 61.72.Ff, 71.55.Eq
DOI	10.1002/crat.200711018

The crystal quality of GaN thin film on silicon using GaN/AlN superlattice structures was investigated. The growth was carried out on Si(111) for GaN(0001) in a metal-organic vapor phase epitaxy system. Various GaN/AlN superlattice intermediate layers have been designed to decrease the dislocation density. The results showed that the etch pit density could be greatly reduced by one order of magnitude. Cross-sectional transmission electron microscopy (XTEM) study confirmed the efficiency of GaN/AlN superlattice in blocking threading dislocation propagation in GaN crystal. The design of nine period GaN/AlN (20nm/2nm) superlattice has been evidenced to be effective in reducing the dislocation density and improving the crystal quality. In addition, the dislocation bending in GaN/AlN interface and dislocation merging is investigated.

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