Thick GaN layers on sapphire with various buffer layers by R. Korbutowicz, E. Dumiszewska, and J. Prażmowska

Crystal Research and Technology

Cryst. Res. Technol. 42, 1297 (2007) - Abstract -

Thick GaN layers on sapphire with various buffer layers

R. Korbutowicz, E. Dumiszewska*, and J. Prażmowska

The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland
*Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

Keywords	HVPE, thick GaN layer, epitaxy, AlN, GaN, MOVPE
PACS	61.10.-i, 68.55.Jk, 81.05.-t, 81.10.-h, 81.15.Gh, 81.15.Kk
DOI	10.1002/crat.200711021

Thick GaN layers deposited in HVPE system on composite substrates made on sapphire substrates in Metalorganic Vapour Phase Epitaxy (MOVPE) system have been investigated. The following substrates were used: (00.1) sapphire substrates with AlN, AlN/GaN and GaN thin layers. The crystallographic structure and the quality of the epitaxial thick GaN layers were determined. Comparison of the three types of thick layers was performed. Significant differences were observed. It was found that thick GaN deposited on the simplest MOVPE-GaN/sapphire composite substrate has comparable structure’s properties as the other, more complicated.

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