Crystal growth and scintillating properties of (Pr,Si)-doped YAlO3 by M. Zhuravleva, A. Novoselov, E. Mihokova, J. A. Mares, A. Vedda, M. Nikl, and A. Yoshikawa

Crystal Research and Technology

Cryst. Res. Technol. 42, 1324 (2007) - Abstract -

Crystal growth and scintillating properties of (Pr,Si)-doped YAlO₃

M. Zhuravleva, A. Novoselov, E. Mihokova*, J. A. Mares*, A. Vedda**, M. Nikl, and A. Yoshikawa

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan
*Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, Prague 6, 16253, Czech Republic
**Department of Materials Science, University of Milan-Bicocca, via Cozzi 53, 20125 Milano, Italy

Keywords	micro-pulling-down-method, oxide scintillator, codoping, thermoluminescence, induced absorption
PACS	81.10.Fq, 78.40.-q, 78.60.Kn
DOI	10.1002/crat.200711026

This paper deals with Pr-doped and Pr, Si-codoped YAlO₃ single crystal growth by the micro-pulling-down method and investigation of their spectroscopic and scintillating properties. The Pr³⁺ 5d-4f radioluminescence intensity is more than 10 times higher than that of Bi₄Ge₃O₁₂ standard sample, but the Si-codoping decreases it. Absorption spectra of as-grown and air-annealed Si,Pr-codoped YAlO₃ samples show along with an onset of 4f-5d transition round 230 nm the induced absorption band at 400 nm which possibly related to a hole center absorption (Pr⁴⁺ or O^-). Thermoluminescence measurements above the room temperature were performed in order to monitor deep electron traps. Strong concentration dependence of thermoluminescence was observed for Pr:YAlO₃ glow curves.

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