Crystal Research and Technology
Cryst. Res. Technol. 42, 1348 (2007) - Abstract -

Physical properties of single crystalline CeNi4.2Mn0.8

M. Klimczak, E. Talik, J. Kusz, A. Kowalczyk*, and T. Tolinski*

Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice, Poland
*Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań, Poland

Keywords rare-earth compounds, lattice parameters, electronic structure, valence fluctuations, electrical resistivity
PACS 71.20.Eh, 82.80.Pv, 71.28.+d
DOI 10.1002/crat.200711030

A single crystal CeNi4.2Mn0.8 was grown by the Czochralski method from a levitating melt. The structural, magnetic, electrical transport and electronic structure properties were examined. X-ray diffraction confirms the hexagonal structure. The f occupancy nf and the coupling Δ between the f level and the conduction states are derived to be about 0.95 and 100 meV, respectively. The X-ray photoemission spectroscopy shows that Ce ions in CeNi4.2Mn0.8 are in the intermediate valance state. The temperature dependence of resistivity exhibits the metallic character of this compound and reveals a small inflection at 136 K.





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