Crystal Research and Technology
Cryst. Res. Technol. 42, 1359 (2007) - Abstract -

Observation of individual dislocations in 6H and 4H SiC by means of back-reflection methods of X-ray diffraction topography

W. Wierzchowski, K. Wieteska*, T. Balcer, A. Malinowska, W. Graeff**, and W. Hofman

Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warsaw, Poland
*Institute of Atomic Energy, 05-400 Otwock-Swierk, Poland
**HASYLAB at DESY, Notkestr. 85, 22603 Hamburg, Germany

Keywords silicon carbide, X-ray diffraction topography, dislocations
PACS 61.72.Ff
DOI 10.1002/crat.200711032

SiC crystals of high structural perfection were investigated with several methods of X-ray diffraction topography in Bragg-case geometry. The methods included section and projection synchrotron white beam topography and monochromatic beam topography. The investigated 6H and 4H samples contained in large regions dislocations of density not exceeding 103 cm-2. Most of them cannot be interpreted as hollow core dislocations (micro- or nano-pipes). The concentration of the latter was lower than 102 cm-2. The present investigation confirmed the possibility of revealing dislocations with all used methods. The quality of presently obtained Bragg-case multi-crystal and section images of dislocation enabled analysis based on comparison with numerically simulated images. The analysis confirmed the domination of screw-type dislocations in the investigated crystals.



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