Effects of 50 MeV Si ion irradiation on nonlinear optical benzimidazole single crystals by T. Kanagasekaran, P. Mythili, P. Srinivasan, N. Vijayan, G. Bhagavannarayana, P. K. Kulriya, D. Kanjilal, R. Gopalakrishnan, and P. Ramasamy

Crystal Research and Technology

Cryst. Res. Technol. 42, 1376 (2007) - Abstract -

Effects of 50 MeV Si ion irradiation on nonlinear optical benzimidazole single crystals

T. Kanagasekaran, P. Mythili, P. Srinivasan, N. Vijayan*, G. Bhagavannarayana*, P. K. Kulriya**, D. Kanjilal**, R. Gopalakrishnan, and P. Ramasamy***

Department of Physics, Anna University, Chennai -600 025, India
*Materials Characterization Division, NPL, New Delhi – 110012, India
**Inter University Accelerator Centre, New Delhi-110 067, India
***SSN College of Engineering, Kalavakkam-603 110, India

Keywords	ion irradiation, dielectric properties, absorption coefficient, mechanical properties, solids
PACS	61.80.Jh, 77.22.-d, 78.20.Ci, 62.20.-x
DOI	10.1002/crat.200711035

The 50 MeV Si⁷⁺ ion irradiation induced modifications on structural, dielectric, optical and mechanical properties of Vertical Bridgman grown benzimidazole (BMZ) crystals were studied. The high resolution X-ray diffraction studies show the quality of as grown BMZ and irradiated BMZ crystals. The dielectric constant and dielectric loss as a function of frequency and temperature was studied in detail. The ion induced mechanical behaviour of both as grown BMZ and irradiated BMZ crystals has been explained with the indentation effects using Vickers microhardness tester. UV-VIS. studies reveal the decrease in bandgap values and defects on irradiation. The above results are discussed in detail.

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