Growth of ultra-high purity PbI2 single crystal: (1) Preparation of high purity PbI2 by T. Hayashi, M. Kinpara, J. F. Wang, K. Mimura, and M. Isshiki

Crystal Research and Technology

Cryst. Res. Technol. 43, 9 (2008) - Abstract -

Growth of ultra-high purity PbI2 single crystal: (1) Preparation of high purity PbI₂

T. Hayashi, M. Kinpara, J. F. Wang, K. Mimura, and M. Isshiki

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 1-1, Katahira 2-chome, Aobaku, Sendai 980-8577, Japan

Keywords	purification, crystal growth, semiconducting lead compounds
PACS	29.40.-n, 73.61.Le, 81.10.Fq
DOI	10.1002/crat.200711051

In order to prepare high purity lead iodide (PbI₂) single crystals, the starting material-iodine (I) has been purified by the sublimation method, and the PbI₂ polycrystalline by the normal freezing method. The purification effect of these methods has been confirmed by evaluating the impurity concentration in ingot by glow discharge mass spectrometry (GDMS) analysis. By comparing the purity of three different starting materials, non-purified iodine+6N-Pb, purified iodine+6N-Pb and commercial 6N-PbI₂, PbI₂ synthesized by purified iodine in the present experiment has the highest purity. This indicates that these purification methods are suitable. The present research results are expected to prepare high-resistivity PbI₂ used in radiation detector.

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