Transport property measurements in tungsten sulphoselenide single crystals grown by a CVT technique by G. K. Solanki, D. N. Gujarathi, M. P. Deshpande, D. Lakshminarayana, and M. K. Agarwal

Crystal Research and Technology

Cryst. Res. Technol. 43, 179 (2008) - Abstract -

Transport property measurements in tungsten sulphoselenide single crystals grown by a CVT technique

G. K. Solanki, D. N. Gujarathi*, M. P. Deshpande, D. Lakshminarayana, and M. K. Agarwal

Department of Physics/Electronics, Sardar Patel University, Vallabh Vidyanagar-388 120, Gujarat, India
*Department of Physics, Pratap College, Amalner, Maharashtra, India

Keywords	vapour phase technique, single crystal, tungsten sulphoselenide, transport properties
PACS	G.01.R
DOI	10.1002/crat.200711060

The transport properties of ternary mixed WS_xSe_2-x single crystals have been studied by measuring the thermo power, electrical conductivities and Hall parameters in a small temperature range 303-423 K. The electrical conductivity was highest for selenium rich WSe₂ and lowest for sulphur rich WS₂ crystals. All the crystals showed semiconducting behaviour from the temperature dependence of ‘ρ’, ‘R_H’ and ‘S’. The Hall coefficients showed that the samples are p-type conducting. The temperature dependence of resistivity, Hall coefficients, carrier concentration showed that all of them are thermally activated. The values of activation energies, pre-exponential factors and the scattering parameters have been determined. The dominant scattering mechanism for the charge carriers has been explained. The relation between the TEP and the concentration of charge carriers and electrical conductivity was studied. The effective masses of holes and the effective density of states have been determined. These parameters show an increase with increase in sulphur content.

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