Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the system Si-C-H-Cl by S. K. Lilov

Crystal Research and Technology

Cryst. Res. Technol. 43, 240 (2008) - Abstract -

Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the system Si-C-H-Cl

S. K. Lilov

Department of Semiconductor Physics, Faculty of Physics,University of Sofia, 5 J. Bourchier Blvd., 1164 Sofia, Bulgaria

Keywords	epitaxial layers, vapor phase, silicon carbide, pyrolysis, thermodynamic equilibrium, high temperature processes
PACS	81.05.Hd, 81.10.Bk, 82.30.Lp, 82.60.-s
DOI	10.1002/crat.200711074

In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si-C-H-Cl in the temperature interval 1000-3000 K. The equilibrium pressures of the components in the system Si-C-H-Cl with taking account the formation of the condensed phases C, Si and SiC have been determined. The optimal conditions giving the maximum yield of silicon carbide by pyrolysis of mixture of volatile compounds of carbon and silicon have been defined. The thermodynamic analysis of the examined system showed that the increasing of the content of hydrogen in the initial mixture allows to decrease the optimal temperature for obtaining of silicon carbide by the method of pyrolysis and essentially to increase its maximum possible yield.

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