Crystal Research and Technology
Cryst. Res. Technol. 43, 289 (2008) - Abstract -

Depth-profile analysis from X-ray photoelectron spectroscopy on As-implanted ZnO activated in ozone ambient

T. S. Jeong, J. H. Kim, S. J. Bae, and C. J. Youn

School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea

Keywords ZnO, XPS, ozone, p type, post annealing, ion implantation
PACS 78.30.-j, 82.80.Pv
DOI 10.1002/crat.200710984

Chemical bonds of As-implanted ZnO annealed in ozone molecular (O3) ambient were analyzed through the x-ray photoelectron spectroscopy as a function of the etching depth. With the etching depth increased to 25 nm from surface, the peaks of Zn2p and O1s core levels shifted toward the low-binding energy, and the bonding formation of As 3d core level gradually varied from As2O5 to As2O3. The new peaks were observed, which were posited to high-binding energy of 4.4 eV from Zn2p and O1s core levels. Finally, the chemical bonds of As-based oxides were found to consist of Zn(AsO3)2, As2O5, and As2O3.




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