Crystal Research and Technology
Cryst. Res. Technol. 43, 355 (2008) - Abstract -

Crystal growth of zirconium-doped KTiOPO4 crystals in the K2O-P2O5-TiO-ZrF4 system

V. I. Ivanenko, I. V. Zatovsky, N. S. Slobodyanik, P. G. Nagornyi, and V. N. Baumer*

Department of Inorganic Chemistry, Taras Shevchenko National University, 64 Volodymyrska str., Kyiv 01033, Ukraine
*STC “Institute for Single Crystals”, National Academy of Science of Ukraine, 60 Lenina ave., Kharkiv 61001, Ukraine

Keywords flux growth method, Zr-doped KTP, X-ray fluorescence analysis, XRD
PACS 61.66.Fn, 81.10.-h, 61.10.Nz, 61.72.Ww, 68.55.Jk
DOI 10.1002/crat.200711097

Zirconium-doped KTiOPO4 (KTP) crystals were grown using a high temperature flux method in the K2O-P2O5-TiO-ZrF4 system. The dopant content in the single crystals with general composition KTi1-xZrxOPO4 (where x = 0 - 0.026) strongly depends on zirconium concentration in the homogeneous melts. AES-ICP method and X-ray fluorescence analysis were used to determine the composition of the obtained crystals. Phase analyses of the products were performed using the powder XRD. The structures of KTiOPO4 containing different quantities of Zr were refined on the basis of single crystal XRD data. Applying ZrF4 precursor for zirconium injection into the flux allowed growing the zirconium-doped KTP crystals at 930-750°C.




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