Crystal Research and Technology
Cryst. Res. Technol. 43, 542 (2008) - Abstract -

Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode

S. S. Patel, B. H. Patel*, and T. S. Patel**

University Science Instrumentation Centre (U.S.I.C.), Sardar Patel, University, Vallabh Vidyanagar, Gujarat 388 120, India
*Department of Electronics, Sardar Patel University, Vallabh-Vidyanagar, Gujarat 388 120, India
**Sardar Vallabhbhai Patel Institute of Technology (S.V.I.T), Vasad, India

Keywords Schottky barrier diode, current-voltage, capacitance- voltage, photoresponse, AgGaTe2 thin film
PACS 71.20.Nr
DOI 10.1002/crat.200711041

An Al/p-AgGaTe2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements.




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