Dislocation and microindentation analysis of vapour grown Bi2Te3-xSex whiskers by A. G. Kunjomana and K. A. Chandrasekharan

Crystal Research and Technology

Cryst. Res. Technol. 43, 594 (2008) - Abstract -

Dislocation and microindentation analysis of vapour grown Bi₂Te_3-xSe_x whiskers

A. G. Kunjomana and K. A. Chandrasekharan

P. G. Department of Physics, Christ College (Autonomous), Bangalore – 560 029, Karnataka, India

Keywords	bismuth telluride, physical vapour deposition (PVD), whiskers, dislocation loops, stacking faults, microhardness, annealing, quenching
PACS	61.72.Ff, 61.72.Ji, 61.72.Nn, 62.20.-x, 68.70.+w
DOI	10.1002/crat.200711084

The structural defects and microhardness of Bi₂Te_3-xSe_x whiskers (x = 0, 0.2 and 0.4 at % Se) grown by physical vapour deposition (PVD) method have been investigated. Concentric pairs of dislocation loops were observed on the as-grown surfaces of short hexagonal prisms. A systematic study of dislocations in these crystals was carried out by chemical etching technique. The effects of Se doping, annealing and quenching on the mechanical properties have also been studied on the prism faces of Bi₂Te_3-xSe_x whiskers.

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