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Crystal Research and Technology |
Cryst. Res. Technol. 43, 679 (2008) - Abstract -
Reduction of domain wall width in VTE treated near stoichiometric LiNbO3 crystals
S. Kar and K. S. Bartwal
Laser Materials Development & Devices Division, Raja Ramanna Centre for Advanced Technology, Indore – 452013, India
| Keywords | lithium niobate, etching, optical microscopy, domain wall width |
| PACS | 81.10.Fq, 81.10.-h |
| DOI | 10.1002/crat.200711083 |
LiNbO3 is a ferroelectric crystal and grows with multi domains. Different domains are separated by boundaries which are known as domain boundaries. Domain walls for congruent and VTE (Vapor Transport Equilibration) treated near stoichiometric lithium niobate samples were visualised in different crystallographic directions using chemical etching technique. The sample is etched in the mixture of HF and HNO3 (in 1:2 volume ratios) for 10 minutes at boiling temperature. Measured domain wall width was found approximately 15-20 μm for congruent (CLN) and it reduces to 1-3 μm for VTE treated near stoichiometric (SLN). Activation energies were also measured by two-probe method and found to be increasing in stoichiometric sample. This activation energy is related to defect density in the crystals. Activation energy is higher for less defective crystals.
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