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Crystal Research and Technology |
Cryst. Res. Technol. 43, 1078 (2008) - Abstract -
Characterization of reactive DC magnetron sputtered TiAlN thin films
B. Subramanian, K. Ashok, P. Kuppusami*, C. Sanjeeviraja**, and M. Jayachandran
ECMS Division, Central Electrochemical Research Institute, Karaikudi-630 006, India
*Physical Metallurgy Section, Indira Gandhi centre for Atomic research, Kalpakkam-603102, India
**Department of Physics, Alagappa University, Karaikudi-630003, India
Thin films of about 1μm Titanium Aluminum Nitride (TiAlN) were deposited onto mild steel substrates by reactive direct current (DC) magnetron sputtering using a target consisting of equal segments of titanium and aluminum. X-ray diffraction (XRD) analysis showed that the TiAlN phase had preferred orientations along 111 and 200 with the face-centered cubic structure. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) analyses indicated that the films were uniform and compact. Photoluminescence (PL) spectra reveal that TiAlN thin films are of good optical quality. Laser Raman studies revealed the presence of characteristic peaks of TiAlN at 312.5, 675, and 1187.5 cm–1.
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