Crystal Research and Technology
Cryst. Res. Technol. 43, 1091 (2008) - Abstract -

Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers

M. R. Islam, N. F. Chen*, and M. Yamada**

Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna 9203, Bangladesh
*Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
**Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606-8585, Japan

Keywords Raman scattering, Mn composition, strain, LPE, Ga1-xMnxSb film
PACS 78.30.-j, 75.50.Pp, 81.15.Lm
DOI 10.1002/crat.200800144

Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga1-xMnxSb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga1-xMnxSb samples show only GaSb-like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x-ray (EDX) experiments, the compositional dependence of GaSb-like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga1-xMnxSb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are suggested by reduced-mass model.





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