Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD by P. Tasli, S. B. Lisesivdin, A. Yildiz, M. Kasap, E. Arslan, S. Özcelik, and E. Ozbay

Crystal Research and Technology

Cryst. Res. Technol. 45, 133 (2010) - Abstract -

Well parameters of two-dimensional electron gas in Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

P. Tasli, S. B. Lisesivdin*, A. Yildiz**, M. Kasap, E. Arslan*, S. Özcelik, and E. Ozbay*

Dept. of Physics, Faculty of Science and Arts, University of Gazi, Teknikokullar, 06500 Ankara, Turkey
*Nanotechnology Research Center, Bilkent University, Bilkent, 06800 Ankara, Turkey
**Dept. of Physics, Faculty of Science and Arts, Ahi Evran University, Asikpasa Kampüsü, 40040 Kirsehir, Turkey

Keywords	2DEG, 2DHG, AlInN/GaN, QMSA
PACS	73.20.-r, 73.21.Fg, 73.40c, 73.50.Dn, 73.61.Ey
DOI	10.1002/crat.200900534

Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the quantitative mobility spectrum analysis (QMSA). A two-dimensional electron gas (2DEG) channel located at the Al0.88In0.12N/GaN interface with an AlN interlayer and a two-dimensional hole gas (2DHG) channel located at the GaN/AlN interface were determined for Al_0.88In_0.12N/AlN/GaN/AlN heterostructures. The interface parameters, such as quantum well width, the deformation potential constant and correlation length as well as the dominant scattering mechanisms for the Al_0.88In_0.12N/GaN interface with an AlN interlayer were determined from scattering analyses based on the exact 2DEG carrier density and mobility obtained with QMSA.

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