Ga₂O₃/SnO₂ coaxial nanowires were synthesized by thermal evaporation of GaN powders and then atomic layer deposition of SnO₂. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis results indicate that the Ga₂O₃ cores and the SnO₂ shells of the coaxial nanowires after thermal annealing are single crystals with monoclinic and simple orthorhombic structures, respectively, although the SnO₂ shells are amorphous before annealing. Our results also show that photoluminescence (PL) emission can be enhanced by thermal annealing in an H₂/N₂ atmosphere. EDX concentration profile suggests that the enhancement in the bluish green emission is due to the increase in the concentration of the Ga vacancies in the cores during the H₂/N₂ annealing. On the other hand, a red emission is newly formed while the bluish green emission is degraded by annealing in an oxygen or nitrogen atmosphere.

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