Crystal Research and Technology
Cryst. Res. Technol. 45, 414 (2010) - Abstract -

Structural, optical and photoconductive properties of electron beam evaporated CdSxSe1-x films

K. Sivaramamoorthy, S. Asath Bahadur*, M. Kottaisamy**, and K. R. Murali***

Department of Physics, Rajapalayam Rajus’ College, Rajapalayam, India
*Dept of Physics, Kalasalingam University,Krishnan Koil, India
**Dept of Chemistry, Kalasalingam University,Krishnan Koil, India
***Electrochemical Materials Science Division, CECRI, Karaikudi, India

Keywords thin films, II – VI, semiconductors, CdSxSe1-x
DOI 10.1002/crat.201000026

CdSxSe1-x films were deposited by the electron beam evaporation technique on glass substrates at different temperatures in the range 30 – 300 °C using the laboratory synthesized powders of different composition. The films exhibited hexagonal structure and the lattice parameters shifted from CdSe to CdS side as the composition changed from CdSe to CdS side. The bandgap of the films increased from 1.68 to 2.41 eV as the concentration of CdS increased. The root-mean-roughness (RMS) values are 3.4, 2.6, 1.2 and 0.6 nm as the composition of the films shifted towards CdS side. The conductivity varies from 30 Ω/cm to 480 Ω/cm as the ‘x’ value increases from 0 to 1. The films exhibited photosensitivity. The PL spectrum shifts towards lower energies with decreasing x, due to the decrease of the fundamental gap with Se composition.




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