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Chairman's Preface (Antoni Rogalski)
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199
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Guest Editor's Preface (Keshra Sangwal)
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200
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Reviews
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R. E. Raab: Some unmeasured crystal properties
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202
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R. Triboulet: Solid state recrystallization: a promising technique for the growth of semiconductor materials
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215
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W. Ryba-Romanowski: YVO4 crystals – puzzles and challenges
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225
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M. V. Bogdanov, S. E. Demina, S. Yu. Karpov, A. V. Kulik, M. S. Ramm, Yu. N. Makarov: Advances in modeling of wide-bandgap bulk crystal growth
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237
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A. Richter, R. Smith: Scanning probe microscopy and computer simulations: Complementary techniques for nanostructured materials and thin films
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250
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A. Boguta, D. Wróbel, T. J. Hoffmann, P. Mazurkiewicz: Mixtures of organic macrocycles for applications in solar cell devices
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267
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Original Papers
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D. Wisniewski, A. J. Wojtowicz, W. Drozdowski, J. M. Farmer, and L. A. Boatner: Rb3Lu(PO4)2:Ce and Cs3Lu(PO4)2:Ce – new promising scintillator materials
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275
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D. Strzeciwilk, Z. Wokulski, P. Tkacz: Growth and TEM and HREM characterisation of TiC crystals grown from high-temperature solutions
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283
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I. Turkevych, R. Grill, J. Franc, P. Höschl, E. Belas, P. Moravec, M. Fiederle, K. W. Benz: Preparation of semi-insulating CdTe doped with group IV elements by post growth annealing
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288
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D. Dobosz, Z. R. Zytkiewicz, T.T. Piotrowski, E. Kaminska, E. Papis, and A. Piotrowska: Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAs
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297
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J. Bak-Misiuk, A. Shalimov, J. Kaniewski, A. Misiuk, E. Dynowska, K. Reginski, J. Trela, T. Przeslawski, J. Hartwig: Stress-induced structural changes in thin InAs layers grown on GaAs substrate
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302
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W. Bogdanowicz: Deformation of decagonal Al-Cu-Co single quasicrystals
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307
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J. Jakubowicz: Study of surface morphology of electrochemically etched n-Si (111) electrodes at different anodic potentials
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313
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R. Szewczyk, A. Bienkowski, R. Kolano: Influence of nanocrystalization on magnetoelastic Villari effect in Fe73.5Nb3Cu1Si13.5B9 alloy
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320
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I. Hanyz, D. Wróbel: Photovoltage generation and fluorescence of charged tetraphenylporphyrins with dopa melanin
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325
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E. Hartmann, Á. Péter, K. Lengyel, L. Kovács: Effect of melt composition on the electrical conductivity and IR absorption of CsLiB6O10 crystals
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331
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M. Kaniewska, A. Misiuk: Electrical properties of hydrogen-implanted Si annealed under high hydrostatic pressure
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336
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H. W. Kunert, D. Dale, M. Hayes, J. Malherbe, V. K. Kononenko, J. Barnas: Hydrogen implantation effect on optical properties of GaAs doping superlattices
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344
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M. Kaniewska, J. Bozek: Deep-level defects induced by Ar-ion beam etching in n-type AlxGa1-xAs grown by MBE
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351
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M. Szybowicz, M. Kozielski, F. Firszt, S. Lęgowski, H. Męczyńska: Raman scattering study of ZnBeSe semiconducting mixed crystals
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359
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H. W. Kunert: Raman selection rules in C46v hexagonal crystals: allowed combinations and overtones of vibrational modes in wurtzite GaN
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366
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D. Kasprowicz, J. Kroupa, A. Majchrowski, E. Michalski, M. Drozdowski, J. Zmija: Elastic and nonlinear optical properties of lithium tetraborate
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374
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L. Isaenko, A. Yelisseyev, S. Lobanov, A. Titov, V. Petrov, J.-J.Zondy, P. Krinitsin, A. Merkulov, V. Vedenyapin, J. Smirnova: Growth and properties of LiGaX2 (X = S, Se, Te) single crystals for nonlinear optical applications in the mid-IR
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379
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A. Matkovskii, P. Potera, D. Sugak, Ya. Zhydachevskii, V. Pankratov, D. Millers, L. Grigorjeva, I. Pracka, T. Lukasiewicz: Transient and stable color centers in pure and Cu-doped LiNbO3
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388
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V. V. Emtsev Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, A. Misiuk, B. Surma, A. Bukowski, C. A. Londos, M. S. Potsidi: Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon
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394
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R. Kudrawiec, L. Bryja, G. Sęk, K. Ryczko, J. Misiewicz, and A. Forchel: Optical properties of an In0.22Ga0.78Sb/GaSb single quantum well
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399
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G. Tomaka, E. M. Sheregii, T. Kakol, W. Strupiński, R. Jakiela, A. Kolek, A. Stadler, K. Mleczko: Magneto-transport in single InGaAs quantum wells of different shapes
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407
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