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| Volume 38 |
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Number 7-8
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Festschrift dedicated to Professor Dr. Klaus-Werner Benz on the occasion of his 65th birthday
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Contents |
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Preface (W. Neumann), Personal Reflections (G. Müller-Vogt)
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531 |
Reviews |
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Yuko Inatomi and Kazuhiko Kuribayashi: In situ observation experiment for semiconductor solution growth under reduced convection condition - a review |
535 |
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P. Rudolph: Non-stoichiometry related defects at the melt growth of semiconductor compound crystals - a review |
542 |
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D. Kashchiev and G. M. van Rosmalen: Review: Nucleation in solutions revisited |
555 |
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T. Aichele, A. Lorenz, R. Hergt, P. Görnert: Garnet layers prepared by liquid phase epitaxy for microwave and magneto-optical applications - a review |
575 |
Original Papers |
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M. Fiederle, V. Babentsov, J. Franc, A. Fauler, J.-P. Konrath: Growth of high resistivity CdTe and (Cd,Zn)Te crystals |
588 |
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J. H. Greenberg, V. N. Guskov, and A. S. Alikhanyan: Solid-vapor equilibrium in quasi-binary CdTe-ZnTe |
598 |
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A. N. Danilewsky and J. Meinhardt: Macrosegregation in the growth of doped III-V-semiconductors from the solution |
604 |
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T. Suzuki, S. Naritsuka, T. Maruyama, and T. Nishinaga: Beam induced lateral epitaxy: a new approach for lateral growth in molecular beam epitaxy |
614 |
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Taketoshi Hibiya, Yoshihiko Asai, Masanobu Sumiji, and Toshiya Kojima: Effect of oxygen partial pressure on silicon single crystal growth by floating zone technique: surface oxidation and Marangoni flow |
619 |
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W. R. Hu and Z. M. Tang: Influence of liquid bridge volume on the floating zone convection |
627 |
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T. P. Lyubimova, R. V. Scuridin, A. Cröll, and P. Dold: Influence of high frequency vibrations on fluid flow and heat transfer in a floating zone |
635 |
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N. V. Abrosimov, H. Riemann, W. Schröder, H.-J. Pohl, A. K. Kaliteevski, O. N. Godisov, V. A. Korolyov, A. Ju. Zhilnikov: 29Si and 30Si single crystal growth by mini-Czochralski technique |
654 |
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P. Dold: Czochralski growth of doped germanium with an applied rotating magnetic field |
659 |
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A. Cröll, R. Lantzsch, S. Kitanov, N. Salk, F. R. Szofran, A. Tegetmeier: Melt-crucible wetting behavior in semiconductor melt growth systems |
669 |
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H. Neumann, M. V. Yakushev, and R. D. Tomlinson: Diffusion effects at the Au/p-CuInSe2 contact studied by XPS |
676 |
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K. Sangwal, K. Wójcik, and J. Borc: In situ study of the kinetics of displacement of growth steps on {010} faces of potassium acid phthalate single crystals grown from aqueous solutions |
684 |
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Ch. Stenzel, Th. Meyer, H. Krause, H. Brixy: Noise thermometry in crystal growth facilities for the International Space Station (ISS) |
697 |
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H. Müller, G. Müller-Vogt: Investigation of additional convective transports in liquid metals and semiconductors during diffusion measurements by means of the shear cell technique |
707 |
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Koichi Kakimoto and Lijun Liu: Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth |
716 |
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J. Friedrich, J. Dagner, M. Hainke, G. Müller: Numerical modeling of crystal growth and solidification experiments carried out under microgravity conditions |
726 |
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Chaorong Li, Pewen Ge, Yuzhang Pang, Yongliang Zhai, Chongru Huo, Yude Yu, Zhenhe Zhu: An emulation system for melting zone semiconductor single crystal growth in space |
734 |
