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Preface (K. Sangwal)
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747
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Reviews
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N. Kubota: Effect of Impurities on the Growth Kinetics of Crystals
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749
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M. Bockowski: Growth and Doping of GaN and AlN Single Crystals under High Nitrogen Pressure
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771
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R. Aleksiyko, M. Berkowski, P. Byszewski, B. Dabrowski, R. Diduszko, J. Fink-Finowicki, L. O. Vasylechko: Common Features of Gallium Perovskites
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789
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K. Shimamura, H. Sato, A. Bensalah, V. Sudesh, H. Machida, N. Sarukura, T. Fukuda: Crystal Growth of Fluorides for Optical Applications
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801
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J. Gronkowski, J. Borowski: X-ray High-Resolution Diffractometry for Studies of Diffuse Scattering in Semiconductor Materials
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815
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B. Szymanski, F. Stobiecki: Structure and Magnetic Properties of Metallic Multilayers Exhibiting Giant Magnetoresistance
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825
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Original Papers
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K. Sangwal, E. Mielniczek-Brzóska: On the Effect of Cu(II) Impurity on the Growth Kinetics of Ammonium Oxalate Monohydrate Crystals from Aqueous Solutions
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837
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H. Sakowska, M. Swirkowicz, K. Mazur, T. Lukasiewicz, A.Witek: Growth and Characterization of (La,Sr)(Al,Ta)O3 Single Crystals: a Promising Substrate for GaN Epitaxial Growth
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851
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A. Novosselov, A. Pajaczkowska, E. Talik: X-ray Photoelectron Spectroscopic Studies on Coloration of SrLaAlO4 Single Crystals
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859
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S. M. Kaczmarek, R. Aleksiyko, M. Berkowski, J. Fink-Finowicki, M. Czuba, W. Olesinska: Growth and Optical Properties of LaGaO3/SrTiO3 Mixed Crystals
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865
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A. V. Sapiga, N. A. Sergeev: NMR Investigation of Natrolite Structure
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875
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A. Klos, A. L. Bajor, A. Pajaczkowska: Investigation of Optical and Structural Homogeneity of Ca4GdO(BO3)3 Single Crystals
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885
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A. Molak, J. Kubacki: Structure of NaNbO3: xMn Single Crystals at Room Temperature
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893
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E. Zielinska-Rohozinska, J. Gronkowski, M. Regulska, M. Majer, K. Pakula: X-ray Diffraction Study of Composition Inhomogeneities in Ga1–xInxN Thin Layers
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903
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E. Hartmann: Electrical Conductivity of Bi2TeO5 Single Crystals at High Temperatures
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911
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M. Luszczek, W. Sadowski: Growth and Electric Transport of Ca-doped PrBa2Cu3O7-delta Single Crystals
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917
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B. Koscielska, L. Murawski, B. Kusz, L. Wicikowski: Crystallization of Bi2Sr2Cu1O6 and Bi2Sr2Ca1Cu2O8 Phases in Bi-Sr-Ca-Cu-O Glass
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925
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A. Misiuk, A. Barcz, J. Ratajczak, J. Katcki, J. Bak-Misiuk, L. Bryja, B. Surma, G. Gawlik: Structure of Oxygen - Implanted Silicon Single Crystals Treated at >= 1400 K under High Argon Pressure
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933
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B. Surma, L. Bryja, A. Misiuk, G. Gawlik, J. Jun, I. V. Antonova, M. Prujszczyk: Infrared and Photoluminescence Studies on Silicon Oxide Formation in Oxygen-Implanted Silicon Annealed Under Enhanced Pressure
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943
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B. Keszei, Z. Vértesy, G. Vértesy: Growth of Bi and Ga Substituted YIG and LuIG Layers by LPE Method
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953
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M. Grus, A. Jankowska-Frydel, J. Bohdanowicz, K. Zawada: Chemical Vapor Deposition of Diamond Films in Hot Filament Reactor
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961
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R. Paszkiewicz, B. Paszkiewicz, R. Korbutowicz, J. Kozlowski, M. Tlaczala, L. Bryja, R. Kudrawiec, J. Misiewicz: MOVPE GaN Grown on Alternative Substrates
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971
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O. Procházková, J. Zavadil, K. Zdánský: Role of f-Elements in the Growth of InP Layers for Radiation Detectors
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979
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I. Bolshakova, P. Koptsev, I. Melnyk, T. Moskovets, S. Krukovsky, D. Zayachuk: Control of Parameters of III-V Compound Microcrystals and Epitaxial Layers by means of Complex Doping
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989
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J. Bak-Misiuk, E. Dynowska, A. Misiuk, M. Calamiotou, A. Kozanecki, J. Domagala, D. Kuristyn, W. Glukhanyuk, A. Georgakilas, J. Trela, J. Adamczewska: Effect of High Temperature-Pressure on GaAs Layers Grown on Vicinal Si Substrates
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997
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S. Berger, S. Quoizola, A. Fave, A. Ouldabbes, A. Kaminski, S. Perichon, N-E. Chabane-Sari, D. Barbier, A. Laugier: Liquid Phase Epitaxial Growth of Silicon on Porous Silicon for Photovoltaic Applications
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1005
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Á. Nemcsics, F. Riesz: Influence of Lattice Mismatch and Growth Rate on the Decay of RHEED Oscillation in the Case of InGaAs/GaAs Growth
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1011
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L. Smardz, K. Smardz, R. Czajka: Growth Properties of Ti/Co Multilayers
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1019
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G. Khlyap, P. Sydorchuk: Growth and Electrical Properties of New Semiconductor Compound ZnCdHgTe
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1027
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G. M. Beensh-Marchwicka, E. Prociów, W. Mielcarek: Structure of Ge-Based Films Exhibiting Thermoelectric Effect
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1035
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H. W. Kunert, E. Lavitska: Stresses and Strains in Anisotropic Cubic Ultra-Thin Overlayers
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1045
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I. E. Lukács, F. Riesz: A Simple Algorithm for the Reconstruction of Surface Topography from Makyoh-Topography Images
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1059
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J. Gómez-Morales, J. Torrent-Burgués, R. Rodríguez-Clemente: Crystal Size Distribution of Hydroxyapatite Precipitated in a MSMPR Reactor
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1065
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J. Torrent-Burgués, R. Rodríguez-Clemente: Hydroxyapatite Precipitation in a Semibatch Process
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1075
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M. V. Kozlovsky: Kinetically Controlled Phase Transitions in Side Chain Liquid Crystalline Polymers
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1083
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R. Kubiak, J. Janczak: Coordination Geometries of Metal Ions in Metallophthalocyaninato Complexes
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1095
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A. Szajek: Electronic Structure of Uranium Digermanide
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1105
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M. Kaniewska, I. Slomka: C-V Profiling of GaAs Using Electrolyte Barriers
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1113
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E. Talik, A. Winiarski, B. Kotur, W. Suski: Growth and X –Ray Characterization of ScFe4Al8 Single Crystals
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1119
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D. Kasprowicz, M. Drozdowski, A. Pajaczkowska:Influence of Growth Conditions on the Elastic Properties of SrLaAlO4 and SrLaGaO4 Crystals Studied by Brillouin Scattering Method
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1123
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E. Dobierzewska-Mozrzymas, G. Szymczak, P. Bieganski, E. Pieciul: Microstructures of Inhomogeneous, Discontinuous Metal Films: Computer Simulations and Statistical Description
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1127
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E. Dobierzewska-Mozrzymas, E. Pieciul, P. Bieganski, G. Szymczak: Conduction Mechanisms in Discontinuous Pt Films
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1137
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B. Sciana, D. Radziewicz, B. Paszkiewicz, M. Tlaczala, M. Utko, P. Sitarek, J. Misiewicz, R. Kinder, J. Kovac: Epitaxial Growth and Characterisation of Silicon Delta-Doped GaAs, AlAs and AlxGa1-xAs
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1145
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M. Oszwaldowski, T. Berus, J. Szade, K. Józwiak, I. Olejniczak, P. Konarski: Structural Properties of InSbBi and InSbAsBi Thin Films Prepared by the Flash-Evaporation Method
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1155
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