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| Volume 40 |
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Number 10-11
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Special Issue 34th Annual Conference of the Italian Association of Crystallography Guest Editors: Paola Prete and Maurizio Masi |
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Contents |
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Paola Prete and Maurizio Masi: Guest Editors' Preface |
927 |
Original Papers |
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S. Orlanducci, A. Fiori, E. Tamburri, V. Sessa, M. L. Terranova, and M. Rossi: Nanocrystalline non-planar carbons: Growth of carbon nanotubes and curled nanostructures |
928 |
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L. Zanotti, M. Zha, D. Calestani, E. Comini, and G. Sberveglieri: Growth of tin oxide nanocrystals |
932 |
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D. Calestani, L. Lazzarini, G. Salviati, and M. Zha: Morphological, structural and optical study of quasi-1D SnO2 nanowires and nanobelts |
937 |
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M. De Seta, G. Capellini, and F. Evangelisti: Spontaneous ordering of self-assembled-Ge island |
942 |
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F. Antolini, T. Di Luccio, M. Re, and L. Tapfer: Formation of II-VI nanocrystals in polymeric matrix: Thermolytic synthesis and structural characterization |
948 |
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M. Sciuto, L. Papalino, C. Gagliano, M. Padalino, C. Coccorese, D. Mello, G. Renna, and G. Franco: Deposition pressure influence on morphological and electrical properties of poly-silicon |
955 |
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C. Cavallotti, E. Pantano, A. Veneroni, and M. Masi: Multiscale simulation of silicon film growth |
958 |
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C. F. Pirri, S. Porro, S. Ferrero, E. Celasco, S. Guastella, L. Scaltrito, R. Yakimova, M. Syväjärvi, R. R. Ciechonski, S. De Angelis, and D. Crippa: Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications |
964 |
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A. Veneroni, F. Omarini, and M. Masi: Silicon carbide growth mechanisms from SiH4, SiHCl3 and nC3H8 |
967 |
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A. Veneroni, F. Omarini, M. Masi, S. Leone, M. Mauceri, G. Pistone, and G. Abbondanza: Horizontal hot wall reactor design for epi-SiC growth |
972 |
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M. Begotti, C. Ghezzi, M. Longo, R. Magnanini, A. Parisini, L. Tarricone, and S. Vantaggio: Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources |
976 |
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C. Pelosi, G. Attolini, M. Bosi, C. Frigeri, M. Bersani, D. Giubertoni, L. Vanzetti, and N. Musayeva: Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures |
982 |
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D. Moscatelli, A. Veneroni, C. Cavallotti, M. Masi, M. Bosi, G. Attolini, and C. Pelosi: Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modeling |
987 |
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M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, and W. Richter: Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry |
993 |
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A. S. Brown, M. Losurdo, T. H. Kim, M. M. Giangregorio, S. Choi, M. Morse, P. Wu, P. Capezzuto, and G. Bruno: The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE |
997 |
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M. Traversa, N. Lovergine, P. Prete, L. Tapfer, and A. M. Mancini: Homoepitaxy of ZnTe on (100) oriented substrates: Technology issues and MOVPE growth aspects |
1003 |
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P. Paiano, P. Prete, N. Lovergine, and A. M. Mancini: Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE |
1011 |
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N. Lovergine, P. Prete, L. Tapfer, F. Marzo, and A. M. Mancini: Hydrogen transport vapour growth and properties of thick CdTe epilayers for RT X-ray detector applications |
1018 |
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M. Di Giulio, A. Zappettini, L. Nasi, and S. M. Pietralunga: Rf-sputtering growth of stoichiometric amorphous TeO2 thin films |
1023 |
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F. Chiarella, A. Zappettini, P. Ferro, T. Besagni, F. Licci, A. Cassinese, M. Barra, R. Vaglio, and C. Aruta: Growth and characterization of hybrid (CnH2n+1NH3)2CuCl4 self-assembled films |
1028 |
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M. Begotti, M. Longo, R. Magnanini, L. Tarricone, E. Gombia, R. Mosca, M. Lynch, K. Barnham, M. Mazzer, and G. Hill: Electrical and photoelectrical properties of a GaAs-based p-i-n structure grown by MOVPE |
1033 |
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G. Tiṃ, C. Flores, and R. Campesato: Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells |
1039 |
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G. Tiṃ, C. Flores, and R. Campesato: Bottom cell growth aspects for triple junction InGaP/(In)GaAs/Ge solar cells |
1043 |
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A. Bosio, N. Romeo, A. Podestà, S. Mazzamuto, and V. Canevari: Why CuInGaSe2 and CdTe polycrystalline thin film solar cells are more efficient than the corresponding single crystal? |
1048 |
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M. Porrini: Impact of antimony doping on microdefect formation in Czochralski grown silicon crystals |
1054 |
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F. Bissoli, J. L. Weyher, A. Zappettini, M. Zha, and L. Zanotti: Revealing of defects in CdTe crystals by DSL etching |
1060 |
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G. Attolini, V. Sagredo, L. Mogollón, T. Torres, and C. Frigeri: Growth and characterization of FexMn1-xIn2Se4 (0 ≤ x ≤ 1) single crystals |
1064 |
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D. Calestani, F. Licci, E. Kopnin, G. Calestani, A. Gauzzi, F. Bolzoni, T. Besagni, V. Boffa, and M. Marezio: Preparation and characterization of powders and crystals of Vn-xTixO2n-1 Magneli oxides |
1067 |
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E. Gilioli, F. Licci, G. Calestani, A. Prodi, A. Gauzzi, and G. Salviati: Crystal growth and structural refinement of NaMn7O12 |
1072 |
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C. Paorici, M. Zha, C. Razzetti, L. Zanotti, E. Bassano, and D. Castagnolo: Progressive growth rate reduction due to impurity desorption in vapor grown hexamethylenetetramine crystals |
1076 |
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C. Razzetti, A. Ponzoni, G. Mignoni, M. Zha, L. Zanotti, and C. Paorici: Optical evidence of grown-in strain in solution-grown hexamethylenetetramine |
1082 |
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G. Sgualdino, D. Aquilano, R. Fioravanti, G. Vaccari, and L. Pastero: Growth kinetics, adsorption and morphology of sucrose crystals from aqueous solutions in the presence of raffinose |
1087 |
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A. Bigi, E. Boanini, M. Gazzano, and K. Rubini: Structural and morphological modifications of hydroxyapatite-polyaspartate composite crystals induced by heat treatment |
1094 |
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D. Aquilano, E. Costa, and M. Rubbo: Heterogeneous nucleation and growth of crystal bubbles in aqueous solutions and melts - thermodynamic conditions |
1099 |
Book Review |
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Kazuaki Sakoda:Optical Properties of Photonic Crystals (Joachim Wagner)
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1107 |
