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| Volume 34 | 1999 | Number 2 |
Special Issue (Guest Editor: G. Müller-Vogt)
p. 153: M. A. Hermann,
J. T. Sadowski: Ultrahigh Vacuum Atomic Layer Epitaxy of Ternary II-VI
Semiconductor Compounds
p. 163: F. Rosenberger:
Proteins as a Key to Advanced Crystal Growth Studies
p. 167: D. Tscheuschner,
L. Ratke: Crystallization of InSb in Aerogel Crucibles
p. 175: W. Thalheimer, W. Hartmann,
J. Klemm, B. Lommel: Self-Supporting Carbon Thin Films Used in the
Heavy-Ion Beam
p. 181: G. Mathiak, G.
Frohberg: Interdiffusion and Convection in High Magnetic Fields
p. 189: C. Hannig, E.
Buhrig, G. Gärtner: Incorporation of Carbon by VGF-Growth of GaAs
p. 197: G. Bauer, A.
A. Darhuber, V. Holý: Self-Assembled Germanium-Dot Multilayers
Embedded in Silicon
p. 211: P.-M. Wilde,
K. Schmidt, Th. Teubner, M. Lorenz, T. Boeck: Growth and Characterisation
of Silicon Crystallites on Laser Structured Glass
p. 217: A. Mühlbauer,
A. Muiznieks, G. Raming: System of Mathematical Models for the Analysis
of Industrial FZ-Si-Crystal Growth Processes
p. 227: R. Sauer:
Synthetic Diamond – Basic Research and Applications
p. 243: N. Karl, Ch.
Guenther: Structure and Ordering Principles of Ultrathin Organic Molecular
Films on Surfaces of Layered Semiconductors — Organic-on-Inorganic MBE
p. 255: L. Fornasiero,
E. Mix, V. Peters, K. Petermann, G. Huber:
New Oxide Crystals for Solid State Lasers
p. 261: A. Langsdorf,
W. Assmus: Crystal Growth of Large Icosahedral Zn-Mg-Y Single Grains
by a Liquid Encapsulated Top Seeded Solution Growth Method
p. 267: A. Löffert,
M.-L. Aigner, F. Ritter, W. Assmus: Elements of the Phase Diagram of
YbInCu4
p. 166: M.R.
Brozel, G. E. Stillmann: Properties of Gallium Arsenide ( Third Edition)
(K. W. Benz)
p. 180: D.
Greenspan: Particle Modeling (D. G. Ebling)
p. 196: P.
Capper: Narrow-Gap II-VI Compounds for Optoelectronic and Electromagnetic
Applications (M. Fiederle)